Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure

Fabrizio Roccaforte; Francesco La Via; Antonino La Magna; Salvatore Di Franco; Vito Raineri

doi:10.4028/www.scientific.net/MSF.433-436.819

Paper Titles

Design and Technology Considerations for a RF BJT in SiC
p.797

Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate
p.801

SiC Power Devices: How to be Competitive towards Si-Based Solutions?
p.805

SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations
p.813

Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
p.819

Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
p.823

Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
p.827

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
p.831

Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode
p.835

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Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure

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Materials Science Forum (Volumes 433-436)

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819-822

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.819

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September 2003

Authors:

Fabrizio Roccaforte, Francesco La Via, Antonino La Magna, Salvatore Di Franco, Vito Raineri

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Dual-Metal, Pinch Schottky Rectifiers

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