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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Optimum Design of a SiC Schottky Barrier Diode...

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

831-834

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.831

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Online since:

September 2003

Authors:

Tetsuo Hatakeyama, Mitsuhiro Kushibe, Takatoshi Watanabe, Seiji Imai, Takashi Shinohe

Keywords:

Silicon Carbide (SiC), Thermionic Field Emission, Tunneling Current

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[2] M. Treu, R. Rupp, H. Kapels and W. Bartsch, Mat. Sci. Forum Vol. 353-356 (2001), p.679

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[3] T. Hatakeyama and T. Shinohe, Mat. Sci. Forum, Vol 389-393 (2002), p.1169