1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

843-846

Citation:

L. Zhu et al., "1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal", Materials Science Forum, Vols. 433-436, pp. 843-846, 2003

Online since:

September 2003

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[3] R. Singh, S-H. Ryu, and J.W. Palmour, ISPSD, Toulouse, France, May, (2000).

[4] K.A. Jones, P.B. Shah, K.W. Kirchner, R.T. Lareau, M.C. Wood, M.H. Ervin, R.D. Vispute, R.P. Sharma, T. Venkatesan, and O.W. Holland, Mater. Sci. Eng. B61-62, (1999).

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