SiC Power Devices: How to be Competitive towards Si-Based Solutions?
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p.805
SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations
p.813
p.813
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
p.819
p.819
Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
p.823
p.823
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
p.827
p.827
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
p.831
p.831
Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode
p.835
p.835
The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation
p.839
p.839
1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
p.843
p.843
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
Abstract:
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Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
827-830
Citation:
Online since:
September 2003
Keywords:
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Сopyright:
© 2003 Trans Tech Publications Ltd. All Rights Reserved
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