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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436The Electrothermal Behavior of 4H-SiC Schottky...

The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

839-842

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.839

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Online since:

September 2003

Authors:

Hans Peter Felsl, Gerhard Wachutka, Roland Rupp

Keywords:

Electrothermal Device Simulation, Schottky Diode, SiC Power Devices

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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