Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

847-850

Citation:

M. Domeij et al., "Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level", Materials Science Forum, Vols. 433-436, pp. 847-850, 2003

Online since:

September 2003

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[1] D. Åberg et al., Materials Science Forum, 389-393 (2002), p.1309.

[2] L. Storasta et al., Materials Science Forum, 389-393 (2002), p.549.

[3] U. Zimmermann et. al., Materials Science Forum, 338-342 (2000), p.1323.

[4] N. Dyakonova et. al., IEEE Transactions on Electron Devices, 46 (1999), pp.2188-100.

0 1 10 -7.

[2] 10-7.

[3] 10 -7.

[4] 10 -7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] Diode voltage (V) time (s) b) -800 -700 -600 -500 -400 -300 -200 -100.

0 5 10 -8.

[1] 10 -7 1. 5 10-7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] J=10. 000 A/cm.

[2] Diode voltage (V) time (s) b) -200 -150 -100 -50.

[50] 0 1 10 -7.

[2] 10-7.

[3] 10 -7.

[4] 10 -7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] Current density (A/cm2 ) time (s) a) Increased reverse current -1000 -800 -600 -400 -200.

0 5 10 -8.

[1] 10 -7 1. 5 10-7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] J=10. 000 A/cm.

[2] Current density (A/cm2 ) time (s) a) narrow current peak.

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