Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level

Martin Domeij; Uwe Zimmermann; D. Åberg; John Österman; Anders Hallén; Mikael Östling

doi:10.4028/www.scientific.net/MSF.433-436.847

Paper Titles

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Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode
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1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
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Simulations of High-Voltage 4H-SiC p⁺nn⁺ Diodes Using a Transient Model for the Deep Boron Level
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Optical Switch-On of Silicon Carbide Thyristor
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Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base
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SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Simulations of High-Voltage 4H-SiC p+nn+ Diodes...

Simulations of High-Voltage 4H-SiC p⁺nn⁺ Diodes Using a Transient Model for the Deep Boron Level

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

847-850

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.847

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Online since:

September 2003

Authors:

Martin Domeij, Uwe Zimmermann, D. Åberg, John Österman, Anders Hallén, Mikael Östling

Keywords:

Carrier Traps, Deep B, Device Simulation, High Voltage Diodes, Reverse Recovery

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References

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[4] N. Dyakonova et. al., IEEE Transactions on Electron Devices, 46 (1999), pp.2188-100.

0 1 10 -7.

[2] 10-7.

[3] 10 -7.

[4] 10 -7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] Diode voltage (V) time (s) b) -800 -700 -600 -500 -400 -300 -200 -100.

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0 5 10 -8.

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[1] 10 -7 1. 5 10-7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] J=10. 000 A/cm.

[2] Diode voltage (V) time (s) b) -200 -150 -100 -50.

[50] 0 1 10 -7.

[2] 10-7.

[3] 10 -7.

[4] 10 -7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] Current density (A/cm2 ) time (s) a) Increased reverse current -1000 -800 -600 -400 -200.

Google Scholar

0 5 10 -8.

Google Scholar

[1] 10 -7 1. 5 10-7 J=0 A/cm.

[2] J=1000 A/cm.

[2] J=4000 A/cm.

[2] J=10. 000 A/cm.

[2] Current density (A/cm2 ) time (s) a) narrow current peak.

Google Scholar