OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

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863-866

Citation:

S.R. Wang et al., "OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension", Materials Science Forum, Vols. 433-436, pp. 863-866, 2003

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September 2003

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[1] M. Lazar, C. Raynaud, D. Planson, M.L. Locatelli, K. Isoird, L. Ottaviani, J.P. Chante, R. Nipoti, A. Poggi, G. Cardinali: Mater. Sci. Forum, Vols. 389-393 (2002) p.827.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.827

[2] K. Isoird, M. Lazar, L. Ottaviani, M.L. Locatelli, C. Raynaud, D. Planson, J.P. Chante: Appl. Surf. Sci. Vol. 184 (2001) p.477.

[3] A. O. Konstantinov, Q. Wahab, N. Nordell, U. Lindfelt: J. Electronic Mater. Vol. 27 (1998) p.335.

[4] M. Ruff, H. Mitlehner, R. Helbig: IEEE Transaction Electron Devices, Vol. 41 (1994) p.1040. Journal Title and Volume Number (to be inserted by the publisher) 5.

[5] R. Raghunathan, B.J. Baliga: IEEE Int. Symp. On Power Semiconducor and Devices and IC's, Weimar, Germany (1997) p.173.