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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes...

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

863-866

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.863

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Online since:

September 2003

Authors:

S.R. Wang, Christophe Raynaud, Dominique Planson, Mihai Lazar, Jean-Pierre Chante

Keywords:

6H-SiC, Bipolar Diode, Breakdown Voltage, Junction Termination Extension (JTE), OBIC

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.4028/www.scientific.net/msf.389-393.827

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