Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier; Philippe Godignon; Josep Montserrat; Dominique Planson; Christophe Raynaud; Mihai Lazar; Jean-Pierre  Chante; F. Sarrus; Christian Bonhomme; J.-F. de Palma

doi:10.4028/www.scientific.net/MSF.433-436.871

Paper Titles

Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base
p.855

SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
p.859

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
p.863

4H-SiC pn Diode Grown by LPE Method for High-Power Applications
p.867

Characterization of a 4H-SiC High Power Density Controlled Current Limiter
p.871

Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes
p.875

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
p.879

Fabrication and Characterisation of High-Voltage SiC-Thyristors
p.883

SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
p.887

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Characterization of a 4H-SiC High Power Density...

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

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Materials Science Forum (Volumes 433-436)

Pages:

871-874

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.871

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Online since:

September 2003

Authors:

Dominique Tournier, Philippe Godignon, Josep Montserrat, Dominique Planson, Christophe Raynaud, Mihai Lazar, Jean-Pierre Chante, F. Sarrus, Christian Bonhomme, J.-F. de Palma

Keywords:

Current Limiter, Electrical Characterization, High Voltage (HV), Junction Field Effect Transistor (JFET), Serial Protection Device

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References

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