Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

879-882

DOI:

10.4028/www.scientific.net/MSF.433-436.879

Citation:

I. Sankin et al., "Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination", Materials Science Forum, Vols. 433-436, pp. 879-882, 2003

Online since:

September 2003

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$35.00

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