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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Fabrication and Simulation of 4H-SiC PiN Diodes...

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

879-882

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.879

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Online since:

September 2003

Authors:

Igor Sankin, J.B. Dufrene, J. Neil Merrett, Jeff B. Casady

Keywords:

Device Simulation, Edge Termination, Mesa Guard Rings, PiN Diode

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] R. Singh, K.G. Irvine, J.T. Richmond and J.W. Palmor: Mater. Sci. Forum Vols. 389-393 (2001), pp.1265-1268.

[2] D.T. Morisette and J.A. Cooper, Jr: Mater. Sci. Forum Vols. 389-393 (2001), p.11571160.

[3] S.M. Savage, L.P. Ramberg, B. Kronlund, K. Bergman: 24th European Solid State Device Research Conference, ESSDERC'94, 1994, Edinburg, pp.753-756.

[4] H. Wirth, D. Panknin, W. Skorupa, E. Niemann: Applied Physics Letters Vol. 74, Number 7 15 February 1999, pp.979-981.

[5] L. Fursin et al: Mater. Sci. Forum Vols. 338-342 (2000) pp.1399-1402.

[6] Xueqing Li et al: Mater. Sci. Forum Vols. 338-342 (2000) pp.1375-1378.

[7] W. v. Muench and I. Pfaffeneder, Breakdown field in vapor-grown silicon carbide p-n junctions, Journal of Applied Physics, Vol. 48, No. 11, November 1997, pp.4831-4833.

DOI: 10.1063/1.323509