Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices

Andrej Mihaila; F. Udrea; Philippe Godignon; T. Trajkovic; Gheorghe Brezeanu; Jose Rebollo; José Millan

doi:10.4028/www.scientific.net/MSF.433-436.891

Paper Titles

Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes
p.875

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
p.879

Fabrication and Characterisation of High-Voltage SiC-Thyristors
p.883

SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
p.887

Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
p.891

To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes
p.895

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
p.901

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
p.907

Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
p.913

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Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

891-894

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.891

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Online since:

September 2003

Authors:

Andrej Mihaila, F. Udrea, Philippe Godignon, T. Trajkovic, Gheorghe Brezeanu, Jose Rebollo, José Millan

Keywords:

Buried Field Rings, Edge Termination, High Voltage (HV), Junction Field Effect Transistor (JFET)

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