Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

891-894

DOI:

10.4028/www.scientific.net/MSF.433-436.891

Citation:

A. Mihaila et al., "Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices", Materials Science Forum, Vols. 433-436, pp. 891-894, 2003

Online since:

September 2003

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$35.00

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