Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

901-906

DOI:

10.4028/www.scientific.net/MSF.433-436.901

Citation:

H. Lendenmann et al., "Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC", Materials Science Forum, Vols. 433-436, pp. 901-906, 2003

Online since:

September 2003

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$35.00

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