Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

H. Lendenmann; Peder Bergman; Fanny Dahlquist; Christer Hallin

doi:10.4028/www.scientific.net/MSF.433-436.901

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Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

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Materials Science Forum (Volumes 433-436)

Pages:

901-906

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.901

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Online since:

September 2003

Authors:

H. Lendenmann, Peder Bergman, Fanny Dahlquist, Christer Hallin

Keywords:

300A/4.5kV, Buffer Layer, Electroluminescence, Forward Degradation, SiC Bipolar Diode, SiC Defect Identification, Stacking Fault

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References

[1] H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner and C. Hallin, Mat. Sci. Forum 389-393 (2002) pp.1259-1264.

DOI: 10.4028/www.scientific.net/msf.389-393.1259

Google Scholar

[2] Y. Sugawara et. al. “12-19kV 4H-SiC pin Diodes with Low Power Loss”, ISPSD, (2001).

Google Scholar

[3] H. Lendenmann, et. al. Mat. Sci. Forum 353-356 (2001) pp.727-730.

Google Scholar

[4] Private communication with Prof. M. Skowronski, Carnegie Mellon University.

Google Scholar

[5] H. Jacobson, J. Birch, R. Yakimova, J.P. Bergman, E. Janzen, J. Appl. Phys. 91, 6354 (2002).

Google Scholar

[6] J. P. Bergman, et. al. Mat. Sci. Forum 353-356 (2002) 299-302.

Google Scholar

[7] H. Iwata, U. Lindefelt, S. Öberg, P.R. Briddon Mat. Sci. Forum 89-393, (2001).

Google Scholar