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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Properties of Different Stacking Faults that Cause...

Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

913-916

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.913

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Online since:

September 2003

Authors:

Henrik Jacobsson, Peder Bergman, Christer Hallin, T.O. Tuomi, Erik Janzén

Keywords:

4H-SiC, Degradation, Diode, Stacking Fault, Synchrotron Topography

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[2] P. O. Å. Persson, L. Hultman, H. Jacobson, J. P. Bergman, E. Janzén, J. M. Molina-Aldareguia, W. J. Clegg, and T. Tuomi , Appl. Phys. Lett. 80 (2002) p.4852.

DOI: 10.1063/1.1487904

[3] J.Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, H. Lendenmann, Appl. Phys. Lett. 80 (2002) p.749.

[4] H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J. P. Bergman, A. Ellison, T. Tuomi, and E. Janzén, J. Appl. Phys. 91 (2002).