Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

925-928

DOI:

10.4028/www.scientific.net/MSF.433-436.925

Citation:

K. Kojima et al., "Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face", Materials Science Forum, Vols. 433-436, pp. 925-928, 2003

Online since:

September 2003

Export:

Price:

$35.00

In order to see related information, you need to Login.