Paper Titles

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
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Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
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Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices
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Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study
p.921

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
p.925

Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
p.929

In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
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SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
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SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Influence of Stacking Faults on the I-V...

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.925

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Online since:

September 2003

Authors:

Kazutoshi Kojima, Takaya Ohno, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Johji Nishio, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

Keywords:

(11-20) Face, 4H-SiC, Reverse Characteristics, Stacking Fault

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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