SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

941-944

Citation:

G. Bertuccio et al., "SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range", Materials Science Forum, Vols. 433-436, pp. 941-944, 2003

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September 2003

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DOI: https://doi.org/10.1016/s0080-8784(08)62739-8

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10 20 30 40 50 60 70.

[10] [1] [10] [2] [10] [3] [10] [4] T = 27 °C Np L X-ray Lγ 20. 8 keV Lβ 17. 7 keV 241 Am 26. 3 keV Pulser 415 eV FWHM 59. 5 keV 693 eV FWHM Lα 13. 9 keV SiC Detector Vbias = 200 V Counts Energy [ keV ].

DOI: https://doi.org/10.1016/s0042-207x(78)80491-6

10 20 30 40 50 60 70.

[10] [1] [10] [2] [10] [3] [10] [4] T = 100 °C Np L X-ray Lγ 20. 8 keV Lβ 17. 7 keV 241 Am 26. 3 keV Pulser 1. 0 keV FWHM 59. 5 keV 1. 1 keV FWHM Lα 13. 9 keV SiC Detector Vbias = 200 V Counts Energy [ keV ] Fig. 4A-B. X-γ ray spectra of 241Am acquired with the SiC detector operated at 27 °C and 100 °C, respectively. Noise levels of 415 eV FWHM at 27 °C and 1 keV FWHM at 100 °C have been measured. The energy resolution is limited by the front-end silicon JFET, expecially at 100 °C. The detector is biased at 200 Volts.

DOI: https://doi.org/10.1007/978-1-4614-7804-1_4

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