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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436New Tunnel Schottky SiC Devices Using Mixed...

New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

949-952

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.949

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Online since:

September 2003

Authors:

J. Cerdà, J.R. Morante, Anita Lloyd Spetz

Keywords:

BaSnO₃, Gas Sensor, Oxygen, Schottky Diode, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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