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Paper Titles
SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
p.937
SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range
p.941
Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
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New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics
p.949
MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases
p.953
Radiation Hardness of Silicon Carbide
p.957
NO Gas Detection at High Temperature Using Thin-Pt 4H-SiC and 6H-SiC Schottky Diodes
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Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes
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p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
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MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

953-956

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.953

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Cite this paper

Online since:

September 2003

Authors:

H. Wingbrant, Lars Unéus, Mike Andersson, J. Cerdà, Susan Savage, H. Svenningstorp, P. Salomonsson, P. Ljung, M. Mattsson, J.H. Visser, D. Kubinski, R. Soltis, S.G. Ejakov, D. Moldin, M. Löfdahl, M. Einehag, M. Persson, Anita Lloyd Spetz

Keywords:

Ammonia, Catalytic Metals, Combustion, Exhaust Gases, Field-Effect Transistor, Flue Gases, Gas Sensor, High-Temperature, SCR

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] A. Lloyd Spetz, L. Unéus, H. Svenningstorp, P. Tobias, L-G. Ekedahl, O. Larsson, A. Göras, S. Savage, C. Harris, P. Mårtensson, R. Wigren, P. Salomonsson, B. Häggendahl, P. Ljung, M. Mattsson, and I. Lundström, phys. stat. sol. (a) Vol. 185 (2001).

DOI: 10.1002/1521-396x(200105)185:1<15::aid-pssa15>3.0.co;2-7

Google Scholar

[2] S. M. Savage, A. Konstantinov, A. M. Saroukan, C. Harris, Mater. Sci. Forum Vol. 338-342, (2000) p.1431.

Google Scholar

[3] H. Wingbrant, H. Svenningstorp, P. Salomonsson, P. Tengström, I. Lundström and A. Lloyd Spetz, Sensors and Actuators, submitted.

DOI: 10.1016/s0925-4005(03)00227-2

Google Scholar

[4] H. Wingbrant, I. Lundström and A. Lloyd Spetz, Sensors and Actuators, submitted.

Google Scholar

[5] H. Svenningstorp, P. Tobias, P. Salomonsson, B. Häggendal, I. Lundström, L. -G. Ekedahl, and A. Lloyd Spetz, Proc. Eurosensors XIV, Copenhagen, Denmark, August 27-30, (2000) p.933 (W3E5).

Google Scholar

[6] L. Unéus, T. Artursson, M. Mattsson, P. Ljung, R. Wigren, P. Mårtensson, M. Holmberg, I. Lundström and A. Lloyd Spetz, IEEE Sensors Journal, submitted.

Google Scholar

[7] A. Lloyd Spetz, L. Unéus, H. Svenningstorp, H, Wingbrant, C. I. Harris, P. Salamonsson, P. Tengström, P. Mårtensson, P. Ljung, M. Mattsson, J. H. Visser, S. G. Ejakov, d. Kubinski, L. - G. Ekedahl, I. Lundström, and S.M. Savage, Material Sci. Forum, 389-393 (2002).

DOI: 10.4028/www.scientific.net/msf.389-393.1415

Google Scholar

[8] S. Wold, K. Esbensen, P. Geladi, Chem. Intell. Lab. Syst., 2 (1987) p.37.

Google Scholar

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