p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

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969-974

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A. M. Ivanov et al., "p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation", Materials Science Forum, Vols. 433-436, pp. 969-974, 2003

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September 2003

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[1] N.S. Savkina A.A. Lebedev, D.V. Davydov, A.M. Strel'chuk et. al Mater. Sci. Eng. V. B 77 (2000), p.50.

[2] A. A. Lebedev, N. B. Strokan, A. M. Ivanov, D. V. Davydov, N. S. Savkina, E. V. Bogdanova, A. N. Kuznetsov, R. Yakimova, Appl. Phys. Lett. V. 79 (2001), p.4447.

DOI: https://doi.org/10.1063/1.1428765

[3] N. B. Strokan, A. M. Ivanov, D. V. Davydov, N. S. Savkina, E. V. Bogdanova, A. N. Kuznetsov, A. A. Lebedev, Applied Surface Science V. 184 (2001), p.455.

[4] S.M. Sze. Physics of Semiconductor Devices (John Wiley@ Sons, 1981). 1. 5 2. 0 2. 5 3. 0 3. 5 4. 0.

[15] [30] [45] I, µA 1.

[2] - (U+1. 5) 1/2, V 1/2 Fig. 3. Photocurrent induced by radiation from a mercury lamp as a function of voltage across an n-p-n+ structure. Solid line: fitting, at normalization to 1 µA. Parameters: d = 4. 67 µm, LD = 0. 83 µm. Filters used: 1 - glass and 2 - water + UVS6.

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