Growth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering

T. Seppänen; György Z. Radnóczi; Sukkaneste Tungasmita; L. Hultman; J. Birch

doi:10.4028/www.scientific.net/MSF.433-436.987

Paper Titles

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
p.969

Effect of Tantalum in Sublimation Growth of Aluminum Nitride
p.975

Growth of AlN Bulk Crystals by Sublimation Sandwich Method
p.979

Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
p.983

Growth and Characterization of Epitaxial Wurtzite Al_1-xIn_xN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering
p.987

Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
p.991

Properties of AlN Layers Grown by Sublimation Epitaxy
p.995

Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
p.999

Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
p.1003

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Growth and Characterization of Epitaxial Wurtzite Al_1-xIn_xN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering

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Materials Science Forum (Volumes 433-436)

Pages:

987-990

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.987

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Online since:

September 2003

Authors:

T. Seppänen, György Z. Radnóczi, Sukkaneste Tungasmita, L. Hultman, J. Birch

Keywords:

AlInN, Aluminum Nitride (AlN), Cathodoluminescence, Epitaxial Growth, High Resolution Electron Microscopy (HREM), InN, Magnetron Sputtering, Thin Film, X-Ray Diffraction (XRD)

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References

[1] S. Yamaguchi et al.: J. of Crystal Growth Vol. 195 (1998) p.309.

Google Scholar

[2] M. J. Lukitsch et al.: Appl. Phys. Lett. Vol. 79 (5) (2001) p.632.

Google Scholar

[3] T. Peng et al.: Appl. Phys. Lett. Vol. 71(17) (1997) p.2439.

Google Scholar

[4] K. Kubota, Y. Kobayashi and K. Fujimoto: J. Appl. Phys. Vol. 66 (7) (1989) p.2984.

Google Scholar

[5] E. V. Kalashnikov, V. I. Nikolaev, MIJ-NSR: http: /nsr. mij. mrs. org/2/3/complete. html.

Google Scholar

[6] S. Tungasmita et al.: J. Appl. Phys. Vol. 91 (6) (2002) p.3551.

Google Scholar

[7] S. Tungasmita et al.: Appl. Phys. Lett. Vol. 76 (2) (2000) p.170.

Google Scholar

[8] M. Goano et al.: J. Appl. Phys. Vol. 88 (2000).

Google Scholar