Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy

László S. Tóth; Béla Pécz; Zsolt Czigány; K. Amimer; A. Georgakilas

doi:10.4028/www.scientific.net/MSF.433-436.999

Paper Titles

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
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Effect of Tantalum in Sublimation Growth of Aluminum Nitride
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Growth of AlN Bulk Crystals by Sublimation Sandwich Method
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Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
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Growth and Characterization of Epitaxial Wurtzite Al_1-xIn_xN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering
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Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
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Properties of AlN Layers Grown by Sublimation Epitaxy
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Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
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Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy

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Materials Science Forum (Volumes 433-436)

Pages:

999-1002

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.999

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Online since:

September 2003

Authors:

László S. Tóth, Béla Pécz, Zsolt Czigány, K. Amimer, A. Georgakilas

Keywords:

Gallium Nitride (GaN), Molecular Beam Epitaxy, TEM

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References

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