Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

999-1002

DOI:

10.4028/www.scientific.net/MSF.433-436.999

Citation:

L. S. Tóth et al., "Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy", Materials Science Forum, Vols. 433-436, pp. 999-1002, 2003

Online since:

September 2003

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$35.00

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