Paper Titles

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
p.969

Effect of Tantalum in Sublimation Growth of Aluminum Nitride
p.975

Growth of AlN Bulk Crystals by Sublimation Sandwich Method
p.979

Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
p.983

Growth and Characterization of Epitaxial Wurtzite Al_1-xIn_xN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering
p.987

Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
p.991

Properties of AlN Layers Grown by Sublimation Epitaxy
p.995

Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
p.999

Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
p.1003

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Structural Study of GaN Layers Grown on Carbonized...

Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

1003-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.1003

Citation:

Cite this paper

Online since:

September 2003

Authors:

Francisco M. Morales, A. Ponce, S.I. Molina, Daniel Araujo, R. García, J. Ristic, M.-A. Sánchez-García, Enrique Calleja, Volker Cimalla, Joerg Pezoldt

Keywords:

Gallium Nitride (GaN), MBE, RTCVD, Si Carbonisation , Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: