Paper Titles

Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study
p.921

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
p.925

Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
p.929

In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
p.933

SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
p.937

SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range
p.941

Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
p.945

New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics
p.949

MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases
p.953

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436SEM Visibility of Stacking Faults in 4H-Silicon...

SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

937-940

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.937

Citation:

Cite this paper

Online since:

September 2003

Authors:

Uwe Zimmermann, John Österman, Augustinas Galeckas, Anders Hallén

Keywords:

Diode, Dislocation, Photoluminescence (PL), Scanning Electron Microscope (SEM), Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] A. Galeckas, J. Linnros, and B. Breitholtz: Mater. Sci. Forum V. 338-342 (2000), pp.683-6.

[2] J. Bergman, H. Lendenmann, P. Nilsson, U. Lindefelt, and P. Skytt: Mater. Sci. Forum V. 353-356 (2001), pp.299-302.

DOI: 10.4028/www.scientific.net/msf.353-356.299

[3] P. Persson, L. Hultman, H. Jacobson, J. Molina-Aldareguia, J. Bergman, T. Tuomi, W. Clegg, and E. Janz´en: Mater. Sci. Forum V. 389-393 (2002), pp.423-6.

DOI: 10.4028/www.scientific.net/msf.389-393.423

[4] H. Iwata, U. Lindefelt, S. ¨Oberg, and P. Briddon: Mater. Sci. Forum V. 389-393 (2002), pp.439-42.

[5] R. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. Brillson: Mater. Sci. Forum V. 389-393 (2002), pp.451-4.

DOI: 10.4028/www.scientific.net/msf.389-393.451

[6] H. Iwata, U. Lindefelt, S. ¨Oberg, and P. Briddon: Phys. Rev. B V. 65 (2002), p.033203.

[7] U. Zimmermann, J. ¨Ostermann, J. Zhang, A. Henry, and A. Hall´en: Mater. Sci. Forum V. 389-393 (2002), pp.1285-8.

[8] M. Capano, S. Ryu, J. Cooper, J.A., M. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell, and J. Walker, D.E.: J. Electron. Mater. V. 28 (1999), p.214.

DOI: 10.1007/s11664-999-0016-z

[9] Zeiss AG: DSM 962 Digital Scanning Microscope User Manual (1992).

[10] K. Kanaya and S. Okayama: J. Phys. D: Appl. Phys. V. 5 (Jan. 1972), pp.43-58.

[11] S. Ha, W. Vetter, M. Dudley, and M. Skowronski: Mater. Sci. Forum V. 389-393 (2002), pp.443-6.

[12] H. Lendenmann, F. Dahlquist, J. Bergman, H. Bleichner, and C. Hallin: Mater. Sci. Forum V. 389-393 (2002), pp.1259-4.

DOI: 10.4028/www.scientific.net/msf.389-393.1259