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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Effects of Nitrogen Radical Irradiation on...

Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

945-948

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.945

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Online since:

September 2003

Authors:

Hiroshi Yano, Yusuke Maeyama, Y. Furumoto, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, Nitridation, Nitrogen Radical

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] P. Jamet, S. Dimitrijev and P. Tanner: J. Appl. Phys. Vol. 90 (2001), p.5058.

[2] J. R. Williams, G. Y. Chung, C. C. Tin, K. McDonald, D. Farmer, R. K. Chanana, R. A. Weller, S. T. Pandelides, O. W. Holland, M. K. Das and L. C. Feldman: Mater. Sci. Forum Vol. 389-393 (2002), p.967.

DOI: 10.4028/www.scientific.net/msf.389-393.967

[3] L. A. Lipkin, M. K. Das and J. W. Palmour: Mater. Sci. Forum Vol. 389-393 (2002), p.985.

[4] Y. Maeyama, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki and T. Shirafuji: Mater. Sci. Forum Vol. 389-393 (2002), p.997.

DOI: 10.4028/www.scientific.net/msf.389-393.997