Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

945-948

Citation:

H. Yano et al., "Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs", Materials Science Forum, Vols. 433-436, pp. 945-948, 2003

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September 2003

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DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.997