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Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study
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Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
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Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
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In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
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SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
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SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Reliability of 4H-SiC p-n Diodes on LPE Grown...

Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

929-932

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.929

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Online since:

September 2003

Authors:

G. Sarov, Roumen Kakanakov, T. Cholakova, Liliana Kassamakova, N. Hristeva, G. Lepoeva, P. Philipova, N.I. Kuznetsov, Konstantinos Zekentes

Keywords:

Diode Reliability, Liquid Phase Epitaxy (LPE), pn Diodes, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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