Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

929-932

Citation:

G. Sarov et al., "Reliability of 4H-SiC p-n Diodes on LPE Grown Layers", Materials Science Forum, Vols. 433-436, pp. 929-932, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P.A. Nilsson, J.P. Bergman and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.727.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.727

[2] U. Zimmermann, J. Osterman, J. Zhang, A. Henry and A. Hallen, Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001-, Tsukuba, Japan, (2001), p.15.

[3] J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.299.

[4] A. Galeckas, J. Linros and B. Breitholtz: Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001- , Tsukuba, Japan, (2001), p.59.

[5] H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner, C. Hallin: Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001- , Tsukuba, Japan, (2001), p.181.

[6] Kuznetsov, A. Morozov, V. Ivantsov, V. Sukhoveev, I. Nikitina, A. Zubrilov, S. Rendakova, V. Dmitriev, D. Hofmann, P. Marsi: Mater. Sci. Forum Vol. 338-342, (2000), p.229.

DOI: https://doi.org/10.4028/www.scientific.net/msf.338-342.229

[7] N. Kuznetsov, D. Bauman, A. Gavrilin and E.V. Kalinina: Mater. Sci. Forum Vol. 389-393, (2002), p.1313.