Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study

Hisaomi Iwata; Ulf Lindefelt; Sven Öberg; Patrick R. Briddon

doi:10.4028/www.scientific.net/MSF.433-436.921

Paper Titles

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
p.901

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
p.907

Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
p.913

Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices
p.917

Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study
p.921

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
p.925

Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
p.929

In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
p.933

SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
p.937

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Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study

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Materials Science Forum (Volumes 433-436)

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921-924

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.921

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September 2003

Authors:

Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

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6H-SiC, First-Principle Calculations, Polytype Inclusions, Stacking Fault

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