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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Insight into the Degradation Phenomenon in SiC...

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

907-912

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.907

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Online since:

September 2003

Authors:

Ulf Lindefelt, Hisaomi Iwata, Sven Öberg, Patrick R. Briddon

Keywords:

Degradation, Dislocation, Electronic Polarization, Quantum Well, Stacking Fault

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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