Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

907-912

DOI:

10.4028/www.scientific.net/MSF.433-436.907

Citation:

U. Lindefelt et al., "Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults ", Materials Science Forum, Vols. 433-436, pp. 907-912, 2003

Online since:

September 2003

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