Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

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Materials Science Forum (Volumes 433-436)

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Peder Bergman and Erik Janzén

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907-912

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U. Lindefelt et al., "Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults ", Materials Science Forum, Vols. 433-436, pp. 907-912, 2003

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September 2003

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