Characterization of a 4H-SiC High Power Density Controlled Current Limiter
p.871
p.871
Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes
p.875
p.875
Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
p.879
p.879
Fabrication and Characterisation of High-Voltage SiC-Thyristors
p.883
p.883
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
p.887
p.887
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
p.891
p.891
To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes
p.895
p.895
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
p.901
p.901
Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
p.907
p.907
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
887-890
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Online since:
September 2003
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© 2003 Trans Tech Publications Ltd. All Rights Reserved
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