Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

875-878

Citation:

L. M. Hillkirk and M. Bakowski, "Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes", Materials Science Forum, Vols. 433-436, pp. 875-878, 2003

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September 2003

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DOI: https://doi.org/10.1109/ispsd.2000.856819

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[6] L. M. Hillkirk and M. Bakowski, Dynamic surface temperature measurements in SiC epitaxial power diodes performed under self-heating conditions, in manuscript.

DOI: https://doi.org/10.1016/j.sse.2004.05.077

[7] L. M. Hillkirk, Thermal phenomena in Si power diodes operating under dynamic conditions, Licentiate Thesis, KTH, Royal Institute of Technology, Stockholm (2000).