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HomeMaterials Science ForumMaterials Science Forum Vols. 433-4364H-SiC pn Diode Grown by LPE Method for High-Power...

4H-SiC pn Diode Grown by LPE Method for High-Power Applications

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

867-870

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.867

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Online since:

September 2003

Authors:

N.I. Kuznetsov, D. Bauman, A. Gavrilin, Liliana Kassamakova, Roumen Kakanakov, G. Sarov, T. Cholakova, Konstantinos Zekentes, Ventzislav I. Dimitrov

Keywords:

Deep Traps, Degradation Traps, Electrical Characteristics, Liquid Phase Epitaxy (LPE), PN Diode, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns: J. Apll. Phys. Vol. 76 (1994), p.1363.

[2] H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P.A. Nilsson, J.P. Bergman and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.727.

DOI: 10.4028/www.scientific.net/msf.353-356.727

[3] U. Zimmermann, J. Osterman, J. Zhang, A. Henry and A. Hallen, Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001-, Tsukuba, Japan, (2001), p.15.

[4] J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.299.

DOI: 10.4028/www.scientific.net/msf.353-356.299

[5] N. Kuznetsov, A. Morozov, V. Ivantsov, V. Sukhoveev, I. Nikitina, A. Zubrilov, S. Rendakova, V. Dmitriev, D. Hofmann, P. Marsi: Mater. Sci. Forum Vol. 338-342, (2000), p.229.

DOI: 10.4028/www.scientific.net/msf.338-342.229

[6] N. Kuznetsov, D. Bauman, A. Gavrilin and E.V. Kalinina: Mater. Sci. Forum Vol. 389-393, (2002), p.1313. Tel: +7 (812) 2473612; Fax: +7 (812) 2476425; e-mail: kni@pop. ioffe. rssi. ru.