4H-SiC pn Diode Grown by LPE Method for High-Power Applications

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

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867-870

Citation:

N.I. Kuznetsov et al., "4H-SiC pn Diode Grown by LPE Method for High-Power Applications", Materials Science Forum, Vols. 433-436, pp. 867-870, 2003

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September 2003

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