4H-SiC pn Diode Grown by LPE Method for High-Power Applications

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

867-870

DOI:

10.4028/www.scientific.net/MSF.433-436.867

Citation:

N.I. Kuznetsov et al., "4H-SiC pn Diode Grown by LPE Method for High-Power Applications", Materials Science Forum, Vols. 433-436, pp. 867-870, 2003

Online since:

September 2003

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$35.00

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