To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes
p.895
p.895
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
p.901
p.901
Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
p.907
p.907
Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
p.913
p.913
Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices
p.917
p.917
Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study
p.921
p.921
Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
p.925
p.925
Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
p.929
p.929
In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
p.933
p.933
Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices
Abstract:
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Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
917-920
Citation:
Online since:
September 2003
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© 2003 Trans Tech Publications Ltd. All Rights Reserved
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