Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode

Toshiyuki Ohno; Takaya Ohno; Kensuke Amemiya; Atsuo Watanabe

doi:10.4028/www.scientific.net/MSF.433-436.835

Paper Titles

Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
p.819

Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
p.823

Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
p.827

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
p.831

Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode
p.835

The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation
p.839

1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
p.843

Simulations of High-Voltage 4H-SiC p⁺nn⁺ Diodes Using a Transient Model for the Deep Boron Level
p.847

Optical Switch-On of Silicon Carbide Thyristor
p.851

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Characterization of the Forward Conduction of...

Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

835-838

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.835

Citation:

Cite this paper

Online since:

September 2003

Authors:

Toshiyuki Ohno, Takaya Ohno, Kensuke Amemiya, Atsuo Watanabe

Keywords:

Defect, Excess Current, Ion Implantation, Micropipe, Planar Junction Diode, Space Charge Limited Current

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Ohno and K. Amemiya, Materials Science Forum Vols. 389-393, (2002) p.823.

Google Scholar

[2] T. Ohno and N. Kobayashi, J. Appl. Phys. 89, (2001) p.993.

Google Scholar

[3] P.O.A. Persson and L. Hultman, Mater. Sci. Forum. Vols. 353-356, (2001) p.315.

Google Scholar

[4] T. Ohno and N. Kobayashi, J. Appl. Phys. 91, (2002) p.4136.

Google Scholar

[5] J. A. Edmond, K. Das and R. F. Davis, J. Appl. Phys. 63, (1988) p.922 Fig. 5. log(JF)-log(VF) of TYPE-III diode.

Google Scholar