Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

835-838

Citation:

T. Ohno et al., "Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode", Materials Science Forum, Vols. 433-436, pp. 835-838, 2003

Online since:

September 2003

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[1] T. Ohno and K. Amemiya, Materials Science Forum Vols. 389-393, (2002) p.823.

[2] T. Ohno and N. Kobayashi, J. Appl. Phys. 89, (2001) p.993.

[3] P.O.A. Persson and L. Hultman, Mater. Sci. Forum. Vols. 353-356, (2001) p.315.

[4] T. Ohno and N. Kobayashi, J. Appl. Phys. 91, (2002) p.4136.

[5] J. A. Edmond, K. Das and R. F. Davis, J. Appl. Phys. 63, (1988) p.922 Fig. 5. log(JF)-log(VF) of TYPE-III diode.

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