Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

823-826

DOI:

10.4028/www.scientific.net/MSF.433-436.823

Citation:

C. Blasciuc-Dimitriu et al., "Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vols. 433-436, pp. 823-826, 2003

Online since:

September 2003

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