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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Characterisation of the High Temperature...

Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

823-826

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.823

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Online since:

September 2003

Authors:

C. Blasciuc-Dimitriu, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill

Keywords:

High-Temperature, Reverse Current Fitting, Thermionic-Field Emission

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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