Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

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823-826

Citation:

C. Blasciuc-Dimitriu et al., "Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vols. 433-436, pp. 823-826, 2003

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September 2003

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DOI: https://doi.org/10.1016/s0167-9317(00)00469-x

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