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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Influence of Depletion Region Length on Specific...

Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

765-768

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.765

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Online since:

September 2003

Authors:

Kenichi Ohtsuka, Yoichiro Tarui, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami, Tatsuo Ozeki

Keywords:

Depletion Region, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), N-Layer Channel, On-Resistance

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[6] T. Hatakeyama, T. Watanebe, S. Imai and T. Shinohe, presented in this conference. Fig. 4. Cross-sectional view and measured blocking characteristics of fabricated channel doped MOSFET.