Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

S. Banerjee; T. Paul Chow; Ronald J. Gutmann

doi:10.4028/www.scientific.net/MSF.433-436.757

Paper Titles

Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
p.741

RF Characteristics of Short-Channel SiC MESFETs
p.745

Passivation Effect on Channel Recessed 4H-SiC MESFETs
p.749

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
p.753

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
p.757

Modelling of Radiation Response of p-Channel SiC MOSFETs
p.761

Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
p.765

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
p.769

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
p.773

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC...

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

757-760

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.757

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Online since:

September 2003

Authors:

S. Banerjee, T. Paul Chow, Ronald J. Gutmann

Keywords:

4H-SiC, 6H-SiC, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), RESURF

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References

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