Paper Titles
Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
p.741
RF Characteristics of Short-Channel SiC MESFETs
p.745
Passivation Effect on Channel Recessed 4H-SiC MESFETs
p.749
4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
p.753
Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
p.757
Modelling of Radiation Response of p-Channel SiC MOSFETs
p.761
Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
p.765
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
p.769
Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
p.773

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials - 2002 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

757-760

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.757

Citation:

Cite this paper

Online since:

September 2003

Authors:

S. Banerjee, T. Paul Chow, Ronald J. Gutmann

Keywords:

4H-SiC, 6H-SiC, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), RESURF

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] A. K. Agarw al, N. S. Saks, S. S. Mani, V. S. Hegde and P . A. Sanger, Materials S�ien�e F orum, vols. 338- 342, p.1307, 2000.

Google Scholar

[2] S. Banerjee, K. Chatty , T.P . Cho w and R.J. Gutmann, IEEE Ele�. Dev. Lett., v ol. 22, p.209, 2001.

Google Scholar

[3] S. Banerjee, K. Chatty , T.P . Chow and R.J. Gutmann, Materials S�ien�e F orum, vols. 353-356, p.715, 2000.

Google Scholar

[4] S. Banerjee, T.P . Cho w and R.J. Gutmann, Pro �. International Symp. on Po wer Semi�ondu�tor Devi�es & ICs, p.69, 2002.

Google Scholar

[5] J. A. App els and H. M. J. V aes, IEDM T e� h. Dig., pp.238-241, 1979.

Google Scholar