Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

757-760

DOI:

10.4028/www.scientific.net/MSF.433-436.757

Citation:

S. Banerjee et al., "Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC", Materials Science Forum, Vols. 433-436, pp. 757-760, 2003

Online since:

September 2003

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$35.00

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