Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

757-760

Citation:

S. Banerjee et al., "Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC", Materials Science Forum, Vols. 433-436, pp. 757-760, 2003

Online since:

September 2003

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.