Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

725-730

DOI:

10.4028/www.scientific.net/MSF.433-436.725

Citation:

S. Tanimoto et al., "Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process", Materials Science Forum, Vols. 433-436, pp. 725-730, 2003

Online since:

September 2003

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$35.00

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