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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Gate Oxide with High Dielectric Breakdown Strength...

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

725-730

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.725

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Online since:

September 2003

Authors:

Satoshi Tanimoto, Masakatsu Hoshi, Norihiko Kiritani, Hideyo Okushi, Kazuo Arai

Keywords:

Dielectric Breakdown, Gate Oxide, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Silicon Carbide (SiC), Thermal Oxide

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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