Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

O. Shigiltchoff; Song Bai; Robert P. Devaty; Wolfgang J. Choyke; Tsunenobu Kimoto; H. McD. Hobgood; Philip G. Neudeck; L.M. Porter

doi:10.4028/www.scientific.net/MSF.433-436.705

Paper Titles

The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
p.689

Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
p.693

Diffusion-Welded Al Contacts to p-Type SiC
p.697

Thermal Etching of 6H-SiC (11-20) Substrate Surface
p.701

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
p.705

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
p.709

Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability
p.713

Surface Structure of Electrochemically Etched α-SiC Substrates
p.717

Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?
p.721

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Schottky Barriers for Pt, Mo and Ti on 6H and 4H...

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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705-708

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.705

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Online since:

September 2003

Authors:

O. Shigiltchoff, Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Tsunenobu Kimoto, H. McD. Hobgood, Philip G. Neudeck, L.M. Porter

Keywords:

Breakdown Voltage, Current-Voltage, Internal Photoemission, Schottky Barrier

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References

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DOI: 10.4028/www.scientific.net/msf.389-393.921

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