Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

681-684

Citation:

M.E. Samiji et al., "Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC", Materials Science Forum, Vols. 433-436, pp. 681-684, 2003

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September 2003

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[3] 0 anneal temperature = 255 °C reverse bias = 6 V initial 5 minutes 10 minutes effective concentration (x 10 17 cm -3 ) depth (µm) Fig. 5. 300 K depth profiles of the electrically active Al concentration as function of reverse-bias annealing time, in hydrogenated Pd / p-type 6H-SiC.