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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Thermal Stability of Pd Schottky Contacts to...

Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

681-684

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.681

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Online since:

September 2003

Authors:

M.E. Samiji, A.M. Venter, A.W.R. Leitch

Keywords:

Contact, Electrical Measurements, Hydrogen Passivation, Pd, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[3] 0 anneal temperature = 255 °C reverse bias = 6 V initial 5 minutes 10 minutes effective concentration (x 10 17 cm -3 ) depth (µm) Fig. 5. 300 K depth profiles of the electrically active Al concentration as function of reverse-bias annealing time, in hydrogenated Pd / p-type 6H-SiC.