Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters

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Abstract:

Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.

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Materials Science Forum (Volumes 449-452)

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97-100

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March 2004

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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