Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters
Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.
S.-G. Kang and T. Kobayashi
J. Y. Kim et al., "Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters", Materials Science Forum, Vols. 449-452, pp. 97-100, 2004