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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479The Electronic Characteristics of IrSi Thin Films

The Electronic Characteristics of IrSi Thin Films

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Abstract:

The Schottky barrier height (SBH) of IrSi nanometer thin films prepared by pulsed laser deposition at room temperature and annealed at 600 °C has been studied. The SBH of the sample is deduced from C-V and I-V data. These SBHs decrease with increasing measurement temperature.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

3363-3366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.3363

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Online since:

January 2005

Authors:

Xi Ying Ma

Keywords:

C-V, IrSi Polycrystalline, I-V, Schottky Barrier Height SBH

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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