The Electronic Characteristics of IrSi Thin Films
The Schottky barrier height (SBH) of IrSi nanometer thin films prepared by pulsed laser deposition at room temperature and annealed at 600 °C has been studied. The SBH of the sample is deduced from C-V and I-V data. These SBHs decrease with increasing measurement temperature.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
X. Y. Ma "The Electronic Characteristics of IrSi Thin Films", Materials Science Forum, Vols. 475-479, pp. 3363-3366, 2005