The Electronic Characteristics of IrSi Thin Films

Abstract:

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The Schottky barrier height (SBH) of IrSi nanometer thin films prepared by pulsed laser deposition at room temperature and annealed at 600 °C has been studied. The SBH of the sample is deduced from C-V and I-V data. These SBHs decrease with increasing measurement temperature.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3363-3366

DOI:

10.4028/www.scientific.net/MSF.475-479.3363

Citation:

X. Y. Ma "The Electronic Characteristics of IrSi Thin Films", Materials Science Forum, Vols. 475-479, pp. 3363-3366, 2005

Online since:

January 2005

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$35.00

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