Synthesis and Properties of GaN Nanostructures

Abstract:

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One-dimensional GaN nanostructure films were successfully synthesized by the recently developed sputtering post-nitridation technique. The morphology and structure of GaN nanowires are investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The results indicate that the crystalline GaN nanostructures have a hexagonal wurtzite structure, and there is not any other phase such as Ga2O3 or Ga in the specimen. It also confirms that high quality crystal was obtained in the resulting sample due to the lattice defects decreased and the crystallinity improved in the process of nitridation at high temperature. The growth mechanism of the GaN nanostructures is briefly discussed.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3367-3370

DOI:

10.4028/www.scientific.net/MSF.475-479.3367

Citation:

H.-L. Ma et al., "Synthesis and Properties of GaN Nanostructures", Materials Science Forum, Vols. 475-479, pp. 3367-3370, 2005

Online since:

January 2005

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Price:

$35.00

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