Synthesis and Properties of GaN Nanostructures

Hong-Lei Ma; Cheng Shan Xue; Ying Ge Yang; Hui Zhao Zhang; Jin Ma; Jian Qiang Liu; Hongdi Xiao; Fu Jian Zong

doi:10.4028/www.scientific.net/MSF.475-479.3367

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Synthesis and Properties of GaN Nanostructures

Synthesis and Properties of GaN Nanostructures

Abstract:

One-dimensional GaN nanostructure films were successfully synthesized by the recently developed sputtering post-nitridation technique. The morphology and structure of GaN nanowires are investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The results indicate that the crystalline GaN nanostructures have a hexagonal wurtzite structure, and there is not any other phase such as Ga2O3 or Ga in the specimen. It also confirms that high quality crystal was obtained in the resulting sample due to the lattice defects decreased and the crystallinity improved in the process of nitridation at high temperature. The growth mechanism of the GaN nanostructures is briefly discussed.

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Materials Science Forum (Volumes 475-479)

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3367-3370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.3367

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Online since:

January 2005

Authors:

Hong-Lei Ma, Cheng Shan Xue, Ying Ge Yang, Hui Zhao Zhang, Jin Ma, Jian Qiang Liu, Hongdi Xiao, Fu Jian Zong

Keywords:

Gallium Nitride (GaN), Nanostructure, Post-Nitridation, Synthesis

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