Nickel-Vacancy Complexes in Diamond: An Ab-Initio Investigation

Lucy V.C. Assali; R. Larico; W.V.M. Machado; João F. Justo

doi:10.4028/www.scientific.net/MSF.483-485.1043

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Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
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High Temperature Hydrocarbon Sensing with Pt-Thin Ga₂O₃-SiC Diodes
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Modeling of Photon Recycling in GaN-Devices
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Nickel-Vacancy Complexes in Diamond: An Ab-Initio Investigation
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Manganese Impurity in Boron Nitride and Gallium Nitride
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Heteroepitaxy of GaN on Silicon: In Situ Measurements
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Structure and Energy of the 90° Partial Dislocations in Wurtzite-GaN
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High Temperature Contacts to GaN and SiC Based on TiB_x Nanostructure Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Nickel-Vacancy Complexes in Diamond: An Ab-Initio...

Nickel-Vacancy Complexes in Diamond: An Ab-Initio Investigation

Abstract:

The electronic and structural properties of nickel-vacancy complexes in diamond were investigated by a total energy ab initio methodology. These results are discussed in the context of the electrically active centers, commonly found in synthetic diamond.

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Materials Science Forum (Volumes 483-485)

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1043-1046

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.1043

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May 2005

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Lucy V.C. Assali, R. Larico, W.V.M. Machado, João F. Justo

Keywords:

Impurity, Synthetic Diamond, Transition Metal

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