Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation

Nikita B. Strokan; Alexander M. Ivanov; N.S. Savkina; Alexander A. Lebedev; Vitalii V. Kozlovski; Mikael Syväjärvi; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.483-485.1025

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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Investigation of the SiC Transistor and Diode...

Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation

Abstract:

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 10 13 cm –2 ; in this case, the resolution is ≤ 10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈ 3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 10 14 cm.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

1025-1028

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.1025

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Online since:

May 2005

Authors:

Nikita B. Strokan, Alexander M. Ivanov, N.S. Savkina, Alexander A. Lebedev, Vitalii V. Kozlovski, Mikael Syväjärvi, Rositza Yakimova

Keywords:

Diode Structures, Proton Irradiation, Radiation Hardness, Signal Amplification, Silicon Carbide (SiC), Sublimation Epitaxy, Transistor Structures

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References

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