A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Abstract:

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Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

1005-1008

DOI:

10.4028/www.scientific.net/MSF.483-485.1005

Citation:

P. Brosselard et al., "A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery", Materials Science Forum, Vols. 483-485, pp. 1005-1008, 2005

Online since:

May 2005

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Price:

$35.00

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