A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Pierre Brosselard; Thierry Bouchet; Dominique Planson; Sigo Scharnholz; Gontran Pâques; Mihai Lazar; Christophe Raynaud; Jean-Pierre  Chante; Emil Spahn

doi:10.4028/www.scientific.net/MSF.483-485.1005

Paper Titles

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
p.989

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
p.993

Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range
p.997

Influence of Irradiation on Excess Currents in SiC pn Structures
p.1001

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
p.1005

SiC Materials and Technologies for Sensors Development
p.1009

Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors
p.1015

Measurements of Charge Collection Efficiency of p⁺/n Junction SiC Detectors
p.1021

Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Abstract:

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

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Materials Science Forum (Volumes 483-485)

Pages:

1005-1008

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.1005

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Online since:

May 2005

Authors:

Pierre Brosselard, Thierry Bouchet, Dominique Planson, Sigo Scharnholz, Gontran Pâques, Mihai Lazar, Christophe Raynaud, Jean-Pierre Chante, Emil Spahn

Keywords:

4H-SiC, GTO, Junction Termination Extension (JTE), Mesa, Thyristor

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