A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
P. Brosselard et al., "A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery", Materials Science Forum, Vols. 483-485, pp. 1005-1008, 2005