Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range

Mykola S. Boltovets; Volodymyr V. Basanets; Nicolas Camara; Valentyn A. Krivutsa; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.483-485.997

Paper Titles

Demonstration of High-Power X-Band Oscillation in p⁺/n^-/n⁺ 4H-SiC IMPATT Diodes with Guard-Ring Termination
p.981

Lifetime Control of the Minority Carrier in PiN Diodes by He⁺ Ion Implantation
p.985

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
p.989

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
p.993

Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range
p.997

Influence of Irradiation on Excess Currents in SiC pn Structures
p.1001

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
p.1005

SiC Materials and Technologies for Sensors Development
p.1009

Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors
p.1015

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Investigation of Microwave Switching 4HSiC pin...

Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range

Abstract:

The switching characteristics of 4Н-SiС p-i-n diodes with 6 µm long i-region were investigated in the 20÷500 °С temperature ranges. It is shown that the diode reverse current increases with temperature and does not exceed 10-7 А at temperature of 500 °С (UR = 100 V). The diode resistance rF at forward current of 40 mA decreases as temperature increases from 20 up to 500 °С. The effective minority charge carrier lifetime in the i-region (τр) was determined from the diode switching (from forward current to reverse voltage) characteristics; it was about 5 ns. As temperature increases from 20 up to 500 °С, τр increases by a factor of 3. We discuss the possibility of application of such diodes (i) in microwave switching facilities and (ii) as temperature sensors. A comparison is made between the parameters of 4Н-SiС p-i-n diodes and those of Si p-i-n diodes with comparable values of calculated blocking voltage.