Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Abstract:

The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x106 rad) and 1 MeV neutrons in the doses range from 1.2x1014 cm-2 to 6.24x1014 cm-2. Neutron irradiation with a dose 1.2x1014 cm-2 increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hnmax » 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x1014 cm-2) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.

• Periodical: Materials Science Forum (Volumes 483-485)
• Pages: 993-996
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.483-485.993
• Online since: May 2005
• Authors: Anatoly M. Strel'chuk, Evgenia V. Kalinina, Andrey O. Konstantinov, Anders Hallén
• Keywords: 4H-SiC, Lifetime, Neutron Irradiation, Recombination, γ-Ray

References

[1] A.M. Strel'chuk, N.S. Savkina: Mat. Sci. and Eng. Vol. B80 (2001), p.378.

[2] C. -T. Sah, R.N. Noyce, W. Shockley: Proc. of the I.R.E. Vol. 45 (1957), p.1228.

[3] E.V. Kalinina et al: Semiconductors Vol. 37 (2003), p.1229.

[4] A.M. Strel'chuk et al: Mat. Sci. and Eng. Vol. B61-62 (1999), p.441.