Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Abstract:

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The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x106 rad) and 1 MeV neutrons in the doses range from 1.2x1014 cm-2 to 6.24x1014 cm-2. Neutron irradiation with a dose 1.2x1014 cm-2 increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hnmax » 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x1014 cm-2) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

993-996

DOI:

10.4028/www.scientific.net/MSF.483-485.993

Citation:

A. M. Strel'chuk et al., "Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures", Materials Science Forum, Vols. 483-485, pp. 993-996, 2005

Online since:

May 2005

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$35.00

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