Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation

Abstract:

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This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He+ ion implantation. In this work, we fabricated 4H-SiC PiN diodes with the epitaxial junction and the blocking voltage of 2.6kV, precisely corresponding to the theoretical blocking voltage calculated from the doping concentration (4.0x1015/cm2) and the thickness of the drift layer (16.5 µm). He+ ion implantation was performed with the energy and the dose of 400kV and 1.0x1013-2.0x1014/cm2, respectively. We observed no different characteristics in the blocking voltage (2.6kV) and leakage current (<10µA@2.5kV) between the PiN diodes with/without He+ ion implantation. However, we confirmed the improvement of the current recovery characteristics in the diodes with He+ ion implantation.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

985-988

DOI:

10.4028/www.scientific.net/MSF.483-485.985

Citation:

Y. Tanaka et al., "Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation", Materials Science Forum, Vols. 483-485, pp. 985-988, 2005

Online since:

May 2005

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$35.00

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