Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation

Yasunori Tanaka; Kazutoshi Kojima; Kazuto Takao; Mitsuo Okamoto; Megumi Kawasaki; Akio Takatsuka; Tsutomu Yatsuo; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.483-485.985

Paper Titles

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
p.969

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
p.973

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with V_BR > 4.5 kV
p.977

Demonstration of High-Power X-Band Oscillation in p⁺/n^-/n⁺ 4H-SiC IMPATT Diodes with Guard-Ring Termination
p.981

Lifetime Control of the Minority Carrier in PiN Diodes by He⁺ Ion Implantation
p.985

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
p.989

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
p.993

Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range
p.997

Influence of Irradiation on Excess Currents in SiC pn Structures
p.1001

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Lifetime Control of the Minority Carrier in PiN...

Lifetime Control of the Minority Carrier in PiN Diodes by He⁺ Ion Implantation

Abstract:

This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He+ ion implantation. In this work, we fabricated 4H-SiC PiN diodes with the epitaxial junction and the blocking voltage of 2.6kV, precisely corresponding to the theoretical blocking voltage calculated from the doping concentration (4.0x1015/cm2) and the thickness of the drift layer (16.5 µm). He+ ion implantation was performed with the energy and the dose of 400kV and 1.0x1013-2.0x1014/cm2, respectively. We observed no different characteristics in the blocking voltage (2.6kV) and leakage current (<10µA@2.5kV) between the PiN diodes with/without He+ ion implantation. However, we confirmed the improvement of the current recovery characteristics in the diodes with He+ ion implantation.