8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

Koji Nakayama; Yoshitaka Sugawara; Hidekazu Tsuchida; Toshiyuki Miyanagi; Isaho Kamata; Tomonori Nakamura; Katsunori Asano; R. Ishii

doi:10.4028/www.scientific.net/MSF.483-485.969

Paper Titles

New High-Voltage Unipolar Mode p⁺ Si/n^– 4H-SiC Heterojunction Diode
p.953

SiC Super Junction Power Devices: Modeling and Analysis
p.957

Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films
p.961

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
p.965

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
p.969

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
p.973

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with V_BR > 4.5 kV
p.977

Demonstration of High-Power X-Band Oscillation in p⁺/n^-/n⁺ 4H-SiC IMPATT Diodes with Guard-Ring Termination
p.981

Lifetime Control of the Minority Carrier in PiN Diodes by He⁺ Ion Implantation
p.985

HomeMaterials Science ForumMaterials Science Forum Vols. 483-4858.3 kV 4H-SiC PiN Diode on (000-1) C-Face with...

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

Abstract:

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

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Materials Science Forum (Volumes 483-485)

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969-972

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.969

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May 2005

Authors:

Koji Nakayama, Yoshitaka Sugawara, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Katsunori Asano, R. Ishii

Keywords:

C-Face, Forward Voltage Degradation, PiN Diode

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