8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

Abstract:

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The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

969-972

DOI:

10.4028/www.scientific.net/MSF.483-485.969

Citation:

K. Nakayama et al., "8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation", Materials Science Forum, Vols. 483-485, pp. 969-972, 2005

Online since:

May 2005

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$35.00

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