New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode

Tetsuya Hayashi; Hideaki Tanaka; Yoshio Shimoida; Satoshi Tanimoto; Masakatsu Hoshi

doi:10.4028/www.scientific.net/MSF.483-485.953

Paper Titles

Planar Schottky Microwave Diodes on 4H-SiC
p.937

Design, Fabrication and Characterization of 1.5 mΩcm₂, 800 V 4H-SiC n-Type Schottky Barrier Diodes
p.941

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
p.945

Numerical Analysis of SiC Merged PiN Schottky Diodes
p.949

New High-Voltage Unipolar Mode p⁺ Si/n^– 4H-SiC Heterojunction Diode
p.953

SiC Super Junction Power Devices: Modeling and Analysis
p.957

Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films
p.961

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
p.965

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
p.969

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New High-Voltage Unipolar Mode p⁺ Si/n^– 4H-SiC Heterojunction Diode

Abstract:

We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier diode (SBD) when forward biased. The blocking voltage of the HJD is almost equal to the ideal level in the drift region of n- 4H-SiC. In addition, the HJD has the potential for a lower reverse leakage current compared with the SBD. A HJD was fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer of 4H-SiC. Measured reverse blocking voltage was 1600 V with low leakage current. Switching characteristics of the fabricated HJD showed nearly zero reverse recovery with an inductive load circuit.