Planar Schottky Microwave Diodes on 4H-SiC

Mattias Südow; Niklas Rorsman; Per Åke Nilsson; Herbert Zirath

doi:10.4028/www.scientific.net/MSF.483-485.937

Paper Titles

Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
p.921

Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability
p.925

Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers
p.929

Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
p.933

Planar Schottky Microwave Diodes on 4H-SiC
p.937

Design, Fabrication and Characterization of 1.5 mΩcm₂, 800 V 4H-SiC n-Type Schottky Barrier Diodes
p.941

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
p.945

Numerical Analysis of SiC Merged PiN Schottky Diodes
p.949

New High-Voltage Unipolar Mode p⁺ Si/n^– 4H-SiC Heterojunction Diode
p.953

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Planar Schottky Microwave Diodes on 4H-SiC

Planar Schottky Microwave Diodes on 4H-SiC

Abstract:

Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance. A maximum extrinsic cut-off frequency of 30.8GHz was achieved for a Tungsten/SiC-Schottky diode. The diode geometry dependence on both the cut-off frequency and the breakdown voltage was investigated. The breakdown voltage was found to be linearly dependent on the anode-cathode distance.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

937-940

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.937

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Online since:

May 2005

Authors:

Mattias Südow, Niklas Rorsman, Per Åke Nilsson, Herbert Zirath

Keywords:

Limiter, Mixers, MMIC, Planar Design, Schottky Metals, SiC Schottky Diodes

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References

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