Planar Schottky Microwave Diodes on 4H-SiC

Abstract:

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Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance. A maximum extrinsic cut-off frequency of 30.8GHz was achieved for a Tungsten/SiC-Schottky diode. The diode geometry dependence on both the cut-off frequency and the breakdown voltage was investigated. The breakdown voltage was found to be linearly dependent on the anode-cathode distance.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

937-940

DOI:

10.4028/www.scientific.net/MSF.483-485.937

Citation:

M. Südow et al., "Planar Schottky Microwave Diodes on 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 937-940, 2005

Online since:

May 2005

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Price:

$35.00

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