Planar Schottky Microwave Diodes on 4H-SiC
Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance. A maximum extrinsic cut-off frequency of 30.8GHz was achieved for a Tungsten/SiC-Schottky diode. The diode geometry dependence on both the cut-off frequency and the breakdown voltage was investigated. The breakdown voltage was found to be linearly dependent on the anode-cathode distance.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
M. Südow et al., "Planar Schottky Microwave Diodes on 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 937-940, 2005