Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)

Abstract:

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This paper describes process and device simulation results of SiC floating junction Schottky barrier diodes (Super-SBDs). Two-dimensional process simulation of a SiC device is implemented using the customized ISE’s process simulator “DIOS”. The simulation results reproduce the experimentally observed buried floating junction structure of a SiC Super-SBD. The device simulation method using the anisotropic impact ionization coefficients is formulated. The effect of anisotropic avalanche breakdown field on termination structures of SiC SBDs is examined. Finally, by the device simulation we have shown that the trade-off between the on-state resistance and the breakdown voltage of the super-SBD that contains two drift layers exceeds that of the conventional SBD.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

921-924

DOI:

10.4028/www.scientific.net/MSF.483-485.921

Citation:

T. Hatakeyama et al., "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)", Materials Science Forum, Vols. 483-485, pp. 921-924, 2005

Online since:

May 2005

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$35.00

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