For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
p.901
A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
p.905
Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs
p.909
Optimisation of Heterostructure Bipolar Transistors in SiC
p.913
Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)
p.917
Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
p.921
Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability
p.925
Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers
p.929
Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
p.933

Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

Article Preview

Abstract:

In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a much higher conductivity modulation in the drift region.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

917-920

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.917

Citation:

Cite this paper

Online since:

May 2005

Authors:

Lin Zhu, S. Balachandran, T. Paul Chow

Keywords:

4H-SiC, Insulated Gate Bipolar Transistor (IGBT), MGT, Silicon Carbide (SiC), Simulation, Transistor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] Y. Tang, N. Ramungul and T. P. Chow: Mater. Sci. Forum Vol. 338-342 (2000), p.1415.

Google Scholar

[2] R. Singh, S. Ryu, D. C. Capell and J. W. Palmour: IEEE Trans. on Electron Devices, Vol. 50 (2003), p.774.

DOI: 10.1109/ted.2003.811388

Google Scholar

[3] T. Tanaka, Y. Yasuda and M. Ohayashi: IEEE Trans. on Electron Devices, Vol. ED-33 (1986), p. (2041).

Google Scholar

[4] T. P. Chow: Electrochemical Society Proceedings, Vol. 98-12 (1998), p.16. Fig. 7. Turn-off transient of 10kV 4H-SiC p-IGBT and MGT.

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.